| Citation: |
Feng Quanlin, Shi Xunda, Liu Bin, Liu Zuoxing, Wang Jing, Zhou Qigang. Effect of Rapid Thermal Annealing Ambient on Denuded Zone and Oxygen Precipitates in a 300mm Silicon Wafer[J]. Journal of Semiconductors, 2006, 27(1): 68-72.
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Feng Q L, Shi X D, Liu B, Liu Z X, Wang J, Zhou Q G. Effect of Rapid Thermal Annealing Ambient on Denuded Zone and Oxygen Precipitates in a 300mm Silicon Wafer[J]. Chin. J. Semicond., 2006, 27(1): 68.
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Effect of Rapid Thermal Annealing Ambient on Denuded Zone and Oxygen Precipitates in a 300mm Silicon Wafer
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Abstract
In a 300mm silicon wafer,a suitable denuded zone depth and a high oxygen precipitate density are necessary to get a high gettering efficiency and to improve the gate oxide integrity (GOI).In this work,Ar and an N2/NH3 mixture gas are applied as rapid thermal annealing (RTA) ambients.It is demonstrated that a high density of oxygen precipitate and a thin denuded zone are obtained in the N2/NH3 mixture ambient,while a low density of oxygen precipitate and a thick denuded zone are observed in the wafer annealed in the Ar ambient.The effect of the RTA ambient and annealing time on the denuded zone and oxygen precipitates is discussed.-
Keywords:
- denuded zone,
- oxygen precipitates,
- silicon wafer,
- intrinsic gettering,
- RTA
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References
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Proportional views
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