Chin. J. Semicond. > 1997, Volume 18 > Issue 12 > 935-938
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高质量GaN材料的GSMBE生长

王晓亮 , 孙殿照 , 孔梅影 , 张剑平 , 付荣辉 , 朱世荣 , 曾一平 , 李晋闽 and 林兰英

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(12): 935-938
      王晓亮, 孙殿照, 孔梅影, 张剑平, 付荣辉, 朱世荣, 曾一平, 李晋闽, 林兰英. 高质量GaN材料的GSMBE生长[J]. 半导体学报(英文版), 1997, 18(12): 935-938.
      Citation:
      王晓亮, 孙殿照, 孔梅影, 张剑平, 付荣辉, 朱世荣, 曾一平, 李晋闽, 林兰英. 高质量GaN材料的GSMBE生长[J]. 半导体学报(英文版), 1997, 18(12): 935-938.
      shu

      • Received Date: 2015-08-19

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