| Citation: |
Ying Minju, Du Xiaolong, Liu Yuzi, Zeng Zhaoquan, Mei Zengxia, Zheng Hao, Yuan Hongtao, Jia Jinfeng, Xue Qikun, Zhang Ze. Growth of ZnO Thin Films on LSAT (111) Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy[J]. Journal of Semiconductors, 2005, 26(S1): 82-86.
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Ying M J, Du X L, Liu Y Z, Zeng Z Q, Mei Z X, Zheng H, Yuan H T, Jia J F, Xue Q K, Zhang Z. Growth of ZnO Thin Films on LSAT (111) Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2005, 26(13): 82.
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Growth of ZnO Thin Films on LSAT (111) Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy
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Abstract
By using radio frequency plasma-assisted molecular beam epitaxy,the influence of substrate surface preconditiong and growth temperature on in-plane and polar orientations and surface morphology of ZnO thin films on LSAT (111) substrates are investigated. Rotation domains are observed in ZnO film grown at low temperature, while single-domain O-polar ZnO has been obtained with oxygen radicals pretreatment and high growth temperature. The origin of rotation domains in ZnO thin film is also discussed.-
Keywords:
- ZnO thin film,
- RF-MBE,
- LSAT (111) ,
- rotation domains,
- epitaxial orientation
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References
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Proportional views
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