Citation: |
Yang Yan, Wang Wenbo, Hao Yue. Ohmic Contact to an AlGaN/GaN Heterostructure[J]. Journal of Semiconductors, 2006, 27(10): 1823-1827.
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Yang Y, Wang W B, Hao Y. Ohmic Contact to an AlGaN/GaN Heterostructure[J]. Chin. J. Semicond., 2006, 27(10): 1823.
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Ohmic Contact to an AlGaN/GaN Heterostructure
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Abstract
The ohmic contacts of Ti/Al/Ni/Au on AlGaN/GaN heterostructures are investigated by adopting different Ti/Al structures and thermal annealing processes.The results show that good ohmic contact with a low specific contact resistance of 3.30E-6Ω·cm2 is obtained by evaporating a Ti(20nm)/Al(120nm)/Ni(55nm)/Au(45nm) multilayer and annealing for 30s at 850℃ in ultra-high purity N2 ambient.The ohmic contact has good thermal stability and surface morphology,making it very suitable for manufacturing high performance AlGaN/GaN HEMTs.-
Keywords:
- AlGaN/GaN,
- HEMTs,
- Ti/Al/Ni/Au,
- ohmic contact
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References
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Proportional views