Chin. J. Semicond. > 1990, Volume 11 > Issue 3 > 170-175
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掺铁半绝缘磷化铟的深能级研究

彭承 , 李建林 , 陆峻 and 孙恒慧

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(3): 170-175
      彭承, 李建林, 陆峻, 孙恒慧. 掺铁半绝缘磷化铟的深能级研究[J]. 半导体学报(英文版), 1990, 11(3): 170-175.
      Citation:
      彭承, 李建林, 陆峻, 孙恒慧. 掺铁半绝缘磷化铟的深能级研究[J]. 半导体学报(英文版), 1990, 11(3): 170-175.
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      • Received Date: 2015-08-19

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