Chin. J. Semicond. > 2007, Volume 28 > Issue 2 > 237-240

PAPERS

Regular Perturbation Method for Studying the Subthreshold Characteristics of Nano-Scaled MOSFETs

Dai Yuehua, Chen Junning and Ke Daoming

+ Author Affiliations

PDF

Abstract: We present a new method for studying the subthreshold characteristics of nano-scaled MOSFETs,which we call the "regular perturbation method" . The Poisson equation is solved using this method for the first time.In particular,the depletion approximation and charge-sheet model in the Poisson equation are avoided due to their invalidity in nano-scaled MOSFETs.This yields a conventional exponential form of the subthreshold current,and the subthreshold swing can be obtained analytically from this current equation.The results of the model are compared and verified with the numerical simulation.

Key words: regular perturbationsurface potentialsubthreshold swingnano-scaled MOSFETs

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3845 Times PDF downloads: 1773 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 10 October 2006 Online: Published: 01 February 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Dai Yuehua, Chen Junning, Ke Daoming. Regular Perturbation Method for Studying the Subthreshold Characteristics of Nano-Scaled MOSFETs[J]. Journal of Semiconductors, 2007, 28(2): 237-240. ****Dai Y H, Chen J N, Ke D M. Regular Perturbation Method for Studying the Subthreshold Characteristics of Nano-Scaled MOSFETs[J]. Chin. J. Semicond., 2007, 28(2): 237.
      Citation:
      Dai Yuehua, Chen Junning, Ke Daoming. Regular Perturbation Method for Studying the Subthreshold Characteristics of Nano-Scaled MOSFETs[J]. Journal of Semiconductors, 2007, 28(2): 237-240. ****
      Dai Y H, Chen J N, Ke D M. Regular Perturbation Method for Studying the Subthreshold Characteristics of Nano-Scaled MOSFETs[J]. Chin. J. Semicond., 2007, 28(2): 237.

      Regular Perturbation Method for Studying the Subthreshold Characteristics of Nano-Scaled MOSFETs

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-25
      • Revised Date: 2006-10-10
      • Published Date: 2007-01-30

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return