Citation: |
Yao Fei, Cheng Buwen, Xue Chunlai, Wang Qiming. Over Wet-Etching Self-Aligned Ion Implantation Doping Technology on Fabricating SiGe/Si HBT[J]. Journal of Semiconductors, 2005, 26(S1): 117-120.
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Yao F, Cheng B W, Xue C L, Wang Q M. Over Wet-Etching Self-Aligned Ion Implantation Doping Technology on Fabricating SiGe/Si HBT[J]. Chin. J. Semicond., 2005, 26(13): 117.
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Over Wet-Etching Self-Aligned Ion Implantation Doping Technology on Fabricating SiGe/Si HBT
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Abstract
A new technology of fabricating SiGe/Si HBT--over wet-etching self-aligned ion implantation doping technology is first presented. Over etching the sacrificing layer SiO2 ensures the masking metal layer large enough to shield the following self-aligned ion implantation doping to the base area, and the self-aligned ion implantation doping lessens the non-latent resistance and extends the thickness of the base, resulting the ohm contact easier to be made.-
Keywords:
- over wet etching,
- self-aligned,
- ion implantation doping,
- SiGe HBT
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References
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Proportional views