Chin. J. Semicond. > 1997, Volume 18 > Issue 10 > 787-790
|

CONTENTS

Growth of GaN on Magnesium Aluminate Substrate by LP-MOVPE

段树坤 , 滕学公 , 李国华 , 王玉田 and 杭寅

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2412 Times PDF downloads: 1232 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 October 1997

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1997  >  18(10): 787-790
      段树坤, 滕学公, 李国华, 王玉田, 杭寅. Growth of GaN on Magnesium Aluminate Substrate by LP-MOVPE[J]. 半导体学报(英文版), 1997, 18(10): 787-790.
      Citation:
      段树坤, 滕学公, 李国华, 王玉田, 杭寅. Growth of GaN on Magnesium Aluminate Substrate by LP-MOVPE[J]. 半导体学报(英文版), 1997, 18(10): 787-790.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return