| Citation: |
Liang Renrong, Zhang Kan, Yang Zongren, Xu Yang, Wang Jing, Xu Jun. Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices[J]. Journal of Semiconductors, 2007, 28(10): 1518-1522.
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Liang R R, Zhang K, Yang Z R, Xu Y, Wang J, Xu J. Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices[J]. Chin. J. Semicond., 2007, 28(10): 1518.
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Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices
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Abstract
The fabrication and characterization of strained-Si material grown on a relaxed Si0.79Ge0.21/graded Si1-xGex/Si virtual substrate,using reduced pressure chemical vapor deposition,are presented.The Ge concentration of the constant composition SiGe layer and the grading rate of the graded SiGe layer are estimated with double-crystal X-ray diffraction and further confirmed by SIMS measurements.The surface root mean square roughness of the strained Si cap layer is 2.36nm,and the strain is about 0.83% as determined by atomic force microscopy and Raman spectra,respectively.The threading dislocation density is on the order of 4e4cm-2.Furthermore,it is found that the stress in the strained Si cap layer is maintained even after the high thermal budget process.nMOSFET devices are fabricated and measured in strained-Si and unstrained bulk-Si channels.Compared to the co-processed bulk-Si MOSFETs at room temperature,a significant low vertical field mobility enhancement of about 85% is observed in the strained-Si devices.-
Keywords:
- strained Si,
- RPCVD,
- SiGe virtual substrate,
- mobility enhancement
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References
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Proportional views
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