Chin. J. Semicond. > 1985, Volume 6 > Issue 2 > 150-158
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多晶硅薄膜干氧氧化特性的研究

张爱珍 and 王阳元

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(2): 150-158
      张爱珍, 王阳元. 多晶硅薄膜干氧氧化特性的研究[J]. 半导体学报(英文版), 1985, 6(2): 150-158.
      Citation:
      张爱珍, 王阳元. 多晶硅薄膜干氧氧化特性的研究[J]. 半导体学报(英文版), 1985, 6(2): 150-158.
      shu

      • Received Date: 2015-08-20

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