| Citation: |
Chen Hailong, Wang Lei, Ma Xiangyang, 杨德仁. Infrared Spectrum of Nitrogen-Vacancy Complexes in Nitrogen-Implanted Silicon[J]. Journal of Semiconductors, 2006, 27(7): 1209-1212.
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Chen H L, Wang L, Ma X Y, Infrared Spectrum of Nitrogen-Vacancy Complexes in Nitrogen-Implanted Silicon[J]. Chin. J. Semicond., 2006, 27(7): 1209.
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Infrared Spectrum of Nitrogen-Vacancy Complexes in Nitrogen-Implanted Silicon
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Abstract
Nitrogen ions are implanted into silicon wafer on both sides,followed by rapid thermal processing (RTP) at different temperatures.Fourier transform infrared spectroscopy (FTIR) is employed to characterize the nitrogen behavior in the as-nitrogen-implanted silicon and RTP-treated nitrogen-implanted silicon samples.It is found that four new IR absorption bands appear in the FTIR spectra of the nitrogen-implanted silicon subjected to RTP at 750～900℃,which are believed to be related to nitrogen-vacancy complexes.Theoretical calculation based on a specific atomic configuration model shows that among the newly observed four IR absorption bands there are two bands that are related to the N2V2 complex.-
Keywords:
- silicon,
- N+ implantation,
- infrared spectroscopy,
- N-V complex
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References
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Proportional views
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