Chin. J. Semicond. > 1999, Volume 20 > Issue 3 > 219-224
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包含多子带结构的MOS器件开启电压量子力学效应修正模型

马玉涛 , 李志坚 and 刘理天

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(3): 219-224
      马玉涛, 李志坚, 刘理天. 包含多子带结构的MOS器件开启电压量子力学效应修正模型[J]. 半导体学报(英文版), 1999, 20(3): 219-224.
      Citation:
      马玉涛, 李志坚, 刘理天. 包含多子带结构的MOS器件开启电压量子力学效应修正模型[J]. 半导体学报(英文版), 1999, 20(3): 219-224.
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      • Received Date: 2015-08-20

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