Chin. J. Semicond. > 2001, Volume 22 > Issue 3 > 358-361
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SOIMOSFET因辐照引起的部分耗尽与全耗尽过渡区的漂移

万新恒 , 张兴 , 黄如 , 甘学温 and 王阳元

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Key words: SOIMOSFET, 辐照特性

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(3): 358-361
      万新恒, 张兴, 黄如, 甘学温, 王阳元. SOIMOSFET因辐照引起的部分耗尽与全耗尽过渡区的漂移[J]. 半导体学报(英文版), 2001, 22(3): 358-361.
      Citation:
      万新恒, 张兴, 黄如, 甘学温, 王阳元. SOIMOSFET因辐照引起的部分耗尽与全耗尽过渡区的漂移[J]. 半导体学报(英文版), 2001, 22(3): 358-361.
      shu

      • Received Date: 2015-08-20

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