| Citation: |
Tang Xiaoyan, Zhang Yimen, Zhang Yuming, Guo Hui, Zhang Lin. Direct Tunneling Effect in SiC Schottky Contacts[J]. Journal of Semiconductors, 2006, 27(1): 174-177.
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Tang X Y, Zhang Y M, Zhang Y M, Guo H, Zhang L. Direct Tunneling Effect in SiC Schottky Contacts[J]. Chin. J. Semicond., 2006, 27(1): 174.
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Direct Tunneling Effect in SiC Schottky Contacts
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Abstract
The direct tunneling effect in SiC Schottky contacts is simulated based on electron tunneling probabilities through a triangular barrier,which are accurately solved using the one-dimensional time-independent Schrdinger equation.The simulation results show that the proposed method has the advantages of greater accuracy and adaptability to SiC Schottky contacts in high fields over the WKB approximation.It also can seamlessly treat thermionic emission and tunneling current-
Keywords:
- SiC,
- Schottky contact,
- direct tunneling,
- WKB approximation
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References
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Proportional views
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