Chin. J. Semicond. > 1986, Volume 7 > Issue 1 > 109-112

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中子辐照氢气生长区熔硅中一个新的三斜对称缺陷

吴恩 , 吴书祥 , 毛晋昌 and 秦国刚

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(1): 109-112
      吴恩, 吴书祥, 毛晋昌, 秦国刚. 中子辐照氢气生长区熔硅中一个新的三斜对称缺陷[J]. 半导体学报(英文版), 1986, 7(1): 109-112.
      Citation:
      吴恩, 吴书祥, 毛晋昌, 秦国刚. 中子辐照氢气生长区熔硅中一个新的三斜对称缺陷[J]. 半导体学报(英文版), 1986, 7(1): 109-112.
      shu

      • Received Date: 2015-08-20

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