| Citation: |
Wu Guibin, Ye Zhizhen, Zhao Xing, Liu Guojun, Zhao Binghui. Metal-Induced Grown Poly-SiGe by SiGe Heteroepitaxy on Ni Disilicide[J]. Journal of Semiconductors, 2006, 27(4): 721-724.
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Wu G B, Ye Z Z, Zhao X, Liu G J, Zhao B H. Metal-Induced Grown Poly-SiGe by SiGe Heteroepitaxy on Ni Disilicide[J]. Chin. J. Semicond., 2006, 27(4): 721.
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Metal-Induced Grown Poly-SiGe by SiGe Heteroepitaxy on Ni Disilicide
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Abstract
Poly-SiGe films are prepared using a metal-induced growth technique with an ultrahigh vacuum chemical vapor deposition (UHVCVD) system at low temperatures.The crystal quality and surface morphology of the poly-SiGe films are characterized by XRD and SEM.The influences of various growth parameters on the surface morphology of the poly-SiGe films are investigated.It is shown that when the growth temperature is above 510℃,Ni has a great effect on the poly-SiGe growth.Uniform films are obtained at 10Pa,while densely packed SiGe whiskers are formed when adopting a low-high pressure growth mode-
Keywords:
- metal-induced growth,
- UHVCVD,
- heteroepitaxy,
- Ni disilicide
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References
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Proportional views
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