| Citation: |
Wang Yonggang, Ma Xiaoyu, Xue Yinghong, Sun Hong，Zhang Zhigang，and Wang Qingyue. Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror[J]. Journal of Semiconductors, 2005, 26(2): 250-253.
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Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror[J]. Chin. J. Semicond., 2005, 26(2): 250.
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Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror
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Abstract
A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented. Using the mirror as well as an end mirror，passively mode locked Yb∶YAB laser is realized,which produces a pulse as short as 305ps at 1.044μm.The pulse frequency is 375MHz;the output power is 45mW. -
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