Chin. J. Semicond. > 1983, Volume 4 > Issue 4 > 334-339
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掩膜层生长导致n-GaAs表面化学组分的变化对微波器件性能的影响

陈克铭 , 王森 , 陈维德 and 方浦明

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(4): 334-339
      陈克铭, 王森, 陈维德, 方浦明. 掩膜层生长导致n-GaAs表面化学组分的变化对微波器件性能的影响[J]. 半导体学报(英文版), 1983, 4(4): 334-339.
      Citation:
      陈克铭, 王森, 陈维德, 方浦明. 掩膜层生长导致n-GaAs表面化学组分的变化对微波器件性能的影响[J]. 半导体学报(英文版), 1983, 4(4): 334-339.
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      • Received Date: 2015-08-20

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