Chin. J. Semicond. > 1983, Volume 4 > Issue 4 > 369-373
|

CONTENTS

短沟道CaAs MESFET中的速度过冲效应

冯育坤

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2591 Times PDF downloads: 1217 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 April 1983

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1983  >  4(4): 369-373
      冯育坤. 短沟道CaAs MESFET中的速度过冲效应[J]. 半导体学报(英文版), 1983, 4(4): 369-373.
      Citation:
      冯育坤. 短沟道CaAs MESFET中的速度过冲效应[J]. 半导体学报(英文版), 1983, 4(4): 369-373.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return