Chin. J. Semicond. > 2004, Volume 25 > Issue 2 > 200-205
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SiO_2/SiC界面对4H-SiC n-MOSFET反型沟道电子迁移率的影响

徐静平 , 吴海平 , 黎沛涛 and 韩弼

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Key words: SiC, n-MOSFET, SiO2/SiC界面, 迁移率

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    徐静平, 吴海平, 黎沛涛, 韩弼. SiO_2/SiC界面对4H-SiC n-MOSFET反型沟道电子迁移率的影响[J]. 半导体学报(英文版), 2004, 25(2): 200-205.
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    Received: 19 August 2015 Revised: Online: Published: 01 February 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(2): 200-205
      徐静平, 吴海平, 黎沛涛, 韩弼. SiO_2/SiC界面对4H-SiC n-MOSFET反型沟道电子迁移率的影响[J]. 半导体学报(英文版), 2004, 25(2): 200-205.
      Citation:
      徐静平, 吴海平, 黎沛涛, 韩弼. SiO_2/SiC界面对4H-SiC n-MOSFET反型沟道电子迁移率的影响[J]. 半导体学报(英文版), 2004, 25(2): 200-205.
      shu

      • Received Date: 2015-08-19

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