Chin. J. Semicond. > 2004, Volume 25 > Issue 11 > 1364-1369
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高线性低电压低噪声放大器的设计(英文)

曹克 , 杨华中 and 汪蕙

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Key words: 低电压, 射频, CMOS, 低噪声放大器, 线性特性

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(11): 1364-1369
      曹克, 杨华中, 汪蕙. 高线性低电压低噪声放大器的设计(英文)[J]. 半导体学报(英文版), 2004, 25(11): 1364-1369.
      Citation:
      曹克, 杨华中, 汪蕙. 高线性低电压低噪声放大器的设计(英文)[J]. 半导体学报(英文版), 2004, 25(11): 1364-1369.
      shu

      • Received Date: 2015-08-19

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