Chin. J. Semicond. > 1981, Volume 2 > Issue 4 > 298-306
|

CONTENTS

用MIS结构C(t)特性同时决定半导体表面层内及体内的少子寿命

马鑫荣 , 田立林 and 李志坚

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2593 Times PDF downloads: 936 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 April 1981

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1981  >  2(4): 298-306
      马鑫荣, 田立林, 李志坚. 用MIS结构C(t)特性同时决定半导体表面层内及体内的少子寿命[J]. 半导体学报(英文版), 1981, 2(4): 298-306.
      Citation:
      马鑫荣, 田立林, 李志坚. 用MIS结构C(t)特性同时决定半导体表面层内及体内的少子寿命[J]. 半导体学报(英文版), 1981, 2(4): 298-306.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return