Chin. J. Semicond. > 1999, Volume 20 > Issue 10 > 941-944

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InP衬底表面的H_2/N_2等离子体清洁技术

谭满清 and 茅冬生

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(10): 941-944
      谭满清, 茅冬生. InP衬底表面的H_2/N_2等离子体清洁技术[J]. 半导体学报(英文版), 1999, 20(10): 941-944.
      Citation:
      谭满清, 茅冬生. InP衬底表面的H_2/N_2等离子体清洁技术[J]. 半导体学报(英文版), 1999, 20(10): 941-944.
      shu

      • Received Date: 2015-08-19

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