Citation: |
Zhang Qunfang, Zhu Meifang, Liu Fengzhen, Zhou Yuqin. High-Efficiency n-nc-Si:H/p-c-Si Heterojunction Solar Cells[J]. Journal of Semiconductors, 2007, 28(1): 96-99.
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Zhang Q F, Zhu M F, Liu F Z, Zhou Y Q. High-Efficiency n-nc-Si:H/p-c-Si Heterojunction Solar Cells[J]. Chin. J. Semicond., 2007, 28(1): 96.
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High-Efficiency n-nc-Si:H/p-c-Si Heterojunction Solar Cells
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Abstract
High-efficiency n-nc-Si∶H/p-c-Si heterojunction solar cells are fabricated by hot-wire chemical vapor deposition (HWCVD) at low temperatures.The effects of the crystalline fraction of nc-Si∶H,especially in the buffer layer,and hydrogen treatment time on the performance of the solar cells are investigated.The interface between nc-Si∶H and c-Si is examined by HRTEM.The influence of hydrogen dilution of the buffer layer on the structure of the interface is analyzed.By optimizing the deposition parameters,an nc-Si∶H/c-Si heterojunction solar cell with Jsc=40.8mA/cm2,Voc=576.3mV,FF=73.75%,and η=17.36% has been achieved on CZ single crystalline silicon.-
Keywords:
- nano-crystalline silicon,
- heterojunction,
- solar cells,
- HWCVD
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References
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