Chin. J. Semicond. > 2001, Volume 22 > Issue 12 > 1486-1489
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新颖的衬底pn结隔离型硅射频集成电感(英文)

刘畅 , 陈学良 and 严金龙

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Key words: 硅集成电感, 品质因素, 涡流, pn结隔离

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(12): 1486-1489
      刘畅, 陈学良, 严金龙. 新颖的衬底pn结隔离型硅射频集成电感(英文)[J]. 半导体学报(英文版), 2001, 22(12): 1486-1489.
      Citation:
      刘畅, 陈学良, 严金龙. 新颖的衬底pn结隔离型硅射频集成电感(英文)[J]. 半导体学报(英文版), 2001, 22(12): 1486-1489.
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      • Received Date: 2015-08-20

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