J. Semicond. > 2008, Volume 29 > Issue 8 > 1575-1580
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An Electroluminescence and Emission Mechanism for Small Molecular Doped Polymer Light-Emitting Diodes

Nie Hai, Tang Xianzhong, Chen Zhu and Wu Lijuan

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Abstract: Small-molecule doped polymer light-emitting diodes have been fabricated using a novel PTPD (poly-TPD) as the hole transport material and highly fluorescent Rubrene as the dopant.Electroluminescent characteristics of different doped concentrations are studied at different voltages.The results indicate doping can control luminescence color.EL spectra and PL spectra have been investigated in Rubrene doped PTPD devices.Experiments indicate the presence of energy transfer and charge transfer from PTPD to Rubrene for PL and the presence of energy transfer and carrier trapping from PTPD to Rubrene for EL.The EL emission mechanism for doped devices is carrier trapping and Forster energy transfer processes working together.

Key words: PTPD, doping, emission mechanism

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    Received: 18 August 2015 Revised: 18 March 2008 Online: Published: 01 August 2008

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      Article Navigation >  Journal of Semiconductors  > 2008  >  29(8): 1575-1580
      Nie Hai, Tang Xianzhong, Chen Zhu, Wu Lijuan. An Electroluminescence and Emission Mechanism for Small Molecular Doped Polymer Light-Emitting Diodes[J]. Journal of Semiconductors, 2008, 29(8): 1575-1580. ****Nie H, Tang X Z, Chen Z, Wu L J. An Electroluminescence and Emission Mechanism for Small Molecular Doped Polymer Light-Emitting Diodes[J]. J. Semicond., 2008, 29(8): 1575.
      Citation:
      Nie Hai, Tang Xianzhong, Chen Zhu, Wu Lijuan. An Electroluminescence and Emission Mechanism for Small Molecular Doped Polymer Light-Emitting Diodes[J]. Journal of Semiconductors, 2008, 29(8): 1575-1580. ****
      Nie H, Tang X Z, Chen Z, Wu L J. An Electroluminescence and Emission Mechanism for Small Molecular Doped Polymer Light-Emitting Diodes[J]. J. Semicond., 2008, 29(8): 1575.
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      An Electroluminescence and Emission Mechanism for Small Molecular Doped Polymer Light-Emitting Diodes

      • Department of Communication Engineering,Chengdu University of Information Technology,Chengdu 610225,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • Department of Communication Engineering,Chengdu University of Information Technology,Chengdu 610225,China

      • Department of Communication Engineering,Chengdu University of Information Technology,Chengdu 610225,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • Department of Communication Engineering,Chengdu University of Information Technology,Chengdu 610225,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-01-08
      • Revised Date: 2008-03-18
      • Published Date: 2008-08-02

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