Chin. J. Semicond. > 2007, Volume 28 > Issue 2 > 171-175

PAPERS

Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts

Li Dongmei, Huangfu Liying, Gou Qiujing and Wang Zhihua

+ Author Affiliations

PDF

Abstract: Both nMOS and pMOS transistors with two-edged and multi-finger layouts are fabricated in a standard commercial 0.6μm CMOS/bulk process to study their total ionizing dose (TID) radiation effects.The leakage current,threshold voltage shift,and transconductance of the devices are monitored before and after γ-ray irradiation.Different device bias conditions are used during irradiation.The experiment results show that TID radiation effects on nMOS devices are very sensitive to their layout structures.The impact of the layout on TID effects on pMOS devices is slight and can be neglected.

Key words: MOS transistorlayouttotal ionizing doseradiation effect

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3538 Times PDF downloads: 1412 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 27 September 2006 Online: Published: 01 February 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Li Dongmei, Huangfu Liying, Gou Qiujing, Wang Zhihua. Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts[J]. Journal of Semiconductors, 2007, 28(2): 171-175. ****Li D M, Huang F L Y, Gou Q J, Wang Z H. Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts[J]. Chin. J. Semicond., 2007, 28(2): 171.
      Citation:
      Li Dongmei, Huangfu Liying, Gou Qiujing, Wang Zhihua. Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts[J]. Journal of Semiconductors, 2007, 28(2): 171-175. ****
      Li D M, Huang F L Y, Gou Q J, Wang Z H. Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts[J]. Chin. J. Semicond., 2007, 28(2): 171.

      Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-22
      • Revised Date: 2006-09-27
      • Published Date: 2007-01-30

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return