Chin. J. Semicond. > 1992, Volume 13 > Issue 2 > 109-115
|

CONTENTS

具有MIS结构的n-AlGaAs/InGaAs/n-GaAs双调制掺杂赝HEMT

相奇 , 罗晋生 , 曾庆明 , 周均铭 and 黄绮

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2544 Times PDF downloads: 808 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 February 1992

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1992  >  13(2): 109-115
      相奇, 罗晋生, 曾庆明, 周均铭, 黄绮. 具有MIS结构的n-AlGaAs/InGaAs/n-GaAs双调制掺杂赝HEMT[J]. 半导体学报(英文版), 1992, 13(2): 109-115.
      Citation:
      相奇, 罗晋生, 曾庆明, 周均铭, 黄绮. 具有MIS结构的n-AlGaAs/InGaAs/n-GaAs双调制掺杂赝HEMT[J]. 半导体学报(英文版), 1992, 13(2): 109-115.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return