Chin. J. Semicond. > 2005, Volume 26 > Issue 8 > 1619-1622
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CMOS工艺中GG-NMOS结构ESD保护电路设计

杜鸣 , 郝跃 and 朱志炜

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Key words: ESD, GG-NMOS, 人体放电模式, 栅耦合

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    Received: 18 August 2015 Revised: Online: Published: 01 August 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(8): 1619-1622
      杜鸣, 郝跃, 朱志炜. CMOS工艺中GG-NMOS结构ESD保护电路设计[J]. 半导体学报(英文版), 2005, 26(8): 1619-1622.
      Citation:
      杜鸣, 郝跃, 朱志炜. CMOS工艺中GG-NMOS结构ESD保护电路设计[J]. 半导体学报(英文版), 2005, 26(8): 1619-1622.
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      • Received Date: 2015-08-18

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