Chin. J. Semicond. > 1986, Volume 7 > Issue 2 > 113-119

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硅中负电态和中性态A中心在<100>单轴应力下的择优取向

姚秀琛 , 牟建勋 and 秦国刚

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(2): 113-119
      姚秀琛, 牟建勋, 秦国刚. 硅中负电态和中性态A中心在单轴应力下的择优取向[J]. 半导体学报(英文版), 1986, 7(2): 113-119.
      Citation:
      姚秀琛, 牟建勋, 秦国刚. 硅中负电态和中性态A中心在<100>单轴应力下的择优取向[J]. 半导体学报(英文版), 1986, 7(2): 113-119.
      shu

      • Received Date: 2015-08-20

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