Chin. J. Semicond. > 1984, Volume 5 > Issue 1 > 16-24
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高氧高碳硅单晶中的氧碳沉淀及其形成的二次缺陷

张一心 , 程美乔 , 张泽华 and 刘淑琴

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(1): 16-24
      张一心, 程美乔, 张泽华, 刘淑琴. 高氧高碳硅单晶中的氧碳沉淀及其形成的二次缺陷[J]. 半导体学报(英文版), 1984, 5(1): 16-24.
      Citation:
      张一心, 程美乔, 张泽华, 刘淑琴. 高氧高碳硅单晶中的氧碳沉淀及其形成的二次缺陷[J]. 半导体学报(英文版), 1984, 5(1): 16-24.
      shu

      • Received Date: 2015-08-20

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