Chin. J. Semicond. > 1998, Volume 19 > Issue 7 > 542-547
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采用CCl_2F_2/O_2的高深宽比硅槽的刻蚀

姚雅红 , 赵永军 , 吕苗 , 皮舜 , 李江 and 赵颜军

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    Received: 18 August 2015 Revised: Online: Published: 01 July 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(7): 542-547
      姚雅红, 赵永军, 吕苗, 皮舜, 李江, 赵颜军. 采用CCl_2F_2/O_2的高深宽比硅槽的刻蚀[J]. 半导体学报(英文版), 1998, 19(7): 542-547.
      Citation:
      姚雅红, 赵永军, 吕苗, 皮舜, 李江, 赵颜军. 采用CCl_2F_2/O_2的高深宽比硅槽的刻蚀[J]. 半导体学报(英文版), 1998, 19(7): 542-547.
      shu

      • Received Date: 2015-08-18

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