| Citation: |
Feng Zhen, Zhang Zhiguo, Wang Yong, Mo Jianghui, Song Jianbo, Feng Zhihong, Cai Shujun, Yang Kewu. A Recessed AlGaN/GaN HEMT with High Output Power in the X Band[J]. Journal of Semiconductors, 2007, 28(11): 1773-1776.
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Feng Z, Zhang Z G, Wang Y, Mo J H, Song J B, Feng Z H, Cai S J, Yang K W. A Recessed AlGaN/GaN HEMT with High Output Power in the X Band[J]. Chin. J. Semicond., 2007, 28(11): 1773.
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A Recessed AlGaN/GaN HEMT with High Output Power in the X Band
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Abstract
A high output power recessed AlGaN/GaN HEMT on SiC substrate is fabricated.With the optimized process,the specific contact resistance is less than 1.0e-6Ω·cm2,the current collapse parameter is less than 10%,and the breakdown voltage is more than 80V.For the short gate-wide device,the operation voltage is up to 40V,and the output power density is more than 10W/mm at 8GHz.For the single-cell device,the output power is 12.3W at 8GHz,the gain is 4.9dB,and the PAE is 35%.For the four-cell internally matched device with 8mm total-gate,33.8W output power is achieved at 8GHz,the gain is 6.3dB,and the PAE is 41.77%.The output power of single-cell and internally matched devices are currently the best in mainland China. -
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