Chin. J. Semicond. > 1990, Volume 11 > Issue 6 > 448-452
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快速热生长二氧化硅-硅结构负偏压温度不稳定性

陆德仁 and J.J.WORTMAN

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(6): 448-452
      陆德仁, J.J.WORTMAN. 快速热生长二氧化硅-硅结构负偏压温度不稳定性[J]. 半导体学报(英文版), 1990, 11(6): 448-452.
      Citation:
      陆德仁, J.J.WORTMAN. 快速热生长二氧化硅-硅结构负偏压温度不稳定性[J]. 半导体学报(英文版), 1990, 11(6): 448-452.
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      • Received Date: 2015-08-19

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