Chin. J. Semicond. > 2002, Volume 23 > Issue 1 > 57-60
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采用As_2和As_4模式的新型全固源InAsP分子束外延生长

任在元 , 郝智彪 , 何为 and 罗毅

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Key words: 全固源分子束外延, InAsyP1-y/InP量子阱, As2, As4

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(1): 57-60
      任在元, 郝智彪, 何为, 罗毅. 采用As_2和As_4模式的新型全固源InAsP分子束外延生长[J]. 半导体学报(英文版), 2002, 23(1): 57-60.
      Citation:
      任在元, 郝智彪, 何为, 罗毅. 采用As_2和As_4模式的新型全固源InAsP分子束外延生长[J]. 半导体学报(英文版), 2002, 23(1): 57-60.
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      • Received Date: 2015-08-19

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