Chin. J. Semicond. > 1985, Volume 6 > Issue 4 > 362-368
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GaAs和Si的电子亲合势和功函数的比较研究

邢益荣 and W.Ranke

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(4): 362-368
      邢益荣, W.Ranke. GaAs和Si的电子亲合势和功函数的比较研究[J]. 半导体学报(英文版), 1985, 6(4): 362-368.
      Citation:
      邢益荣, W.Ranke. GaAs和Si的电子亲合势和功函数的比较研究[J]. 半导体学报(英文版), 1985, 6(4): 362-368.
      shu

      • Received Date: 2015-08-20

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