Chin. J. Semicond. > 2003, Volume 24 > Issue 4 > 391-395

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Key words: 寄生效应, 电力线, 物理寄生电容, 补偿电容

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2003

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      宋跃, 邹雪城. a-Si∶HTFT的寄生效应[J]. 半导体学报(英文版), 2003, 24(4): 391-395.
      Citation:
      宋跃, 邹雪城. a-Si∶HTFT的寄生效应[J]. 半导体学报(英文版), 2003, 24(4): 391-395.

      • Received Date: 2015-08-20

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