Citation: |
Chen Dunjun, Shen Bo, Xu Fujun, Tao Yaqi, Zhao Hong, Zhang Rong, Zheng Youdou. Infrared Spectrum of GaN1-xPxTernary Alloy[J]. Journal of Semiconductors, 2005, 26(S1): 5-8.
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Chen D J, Shen B, Xu F J, Tao Y Q, Zhao H, Zhang R, Zheng Y D. Infrared Spectrum of GaN1-xPxTernary Alloy[J]. Chin. J. Semicond., 2005, 26(13): 5.
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Infrared Spectrum of GaN1-xPxTernary Alloy
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Abstract
Infrared reflectivity measurements of GaN1-xPx alloys and quantitative fittings using the dielectric function composed of two phonon oscillators and a carrier contribution are carried out.For the GaN1-xPx alloys,there are two competitive mechanisms that influence the carrier concentration.The one is from the effect of the isoelectronic traps which decrease the carrier concentration while the other is from the effect of defects which increase the carrier concentration.The calculated results of imaginary part of the reciprocal dielectric function of GaN and GaN1-xPx alloys show that the longitudinal optical phonon-plasmon (LPP) modes shift to high frequency direction and its linewidth gradually broadens with increasing carrier concentration in GaN1-xPx,indicating that the coupling of LPP modes gradually enhances and damping of LPP modes gradually augments. -
References
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