Chin. J. Semicond. > 1999, Volume 20 > Issue 4 > 309-313
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可用于器件的侧墙GaAs量子线列阵结构

牛智川 , 周增圻 , 潘钟 and 吴荣汉

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(4): 309-313
      牛智川, 周增圻, 潘钟, 吴荣汉. 可用于器件的侧墙GaAs量子线列阵结构[J]. 半导体学报(英文版), 1999, 20(4): 309-313.
      Citation:
      牛智川, 周增圻, 潘钟, 吴荣汉. 可用于器件的侧墙GaAs量子线列阵结构[J]. 半导体学报(英文版), 1999, 20(4): 309-313.
      shu

      • Received Date: 2015-08-20

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