Abstract: A novel equivalent circuit model for a GaAs PIN diode is presented based on physical analysis.The diode is divided into three parts:the p+n- junction,the i-layer,and the n-n+ junction,which are modeled separately.The entire model is then formed by combining the three sub-models.In this way,the model’s accuracy is greatly enhanced.Furthermore,the corresponding parameter extraction method is easy,requiring no rigorous experiment or measurement.To validate this newly proposed model,fifteen groups of diodes are fabricated.Measurement shows that the model exactly represents behavior of GaAs PIN diodes under both forward and reversely biased conditions.

Key words: GaAs PIN diodes, model, parameter extraction