Citation: |
Yao Feifei, 雷智, Lei Zhi, 张静全, Feng Lianghuan, Zhang Jingquan, 蔡伟, Li Wei, Wu Lili, 黎兵. Preparation of AlSb Polycrystalline Thin Films by Co-Evaporation[J]. Journal of Semiconductors, 2006, 27(9): 1578-1581.
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Yao F F, Lei Z, Feng L H, Zhang J Q, Li W, Wu L L, Preparation of AlSb Polycrystalline Thin Films by Co-Evaporation[J]. Chin. J. Semicond., 2006, 27(9): 1578.
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Preparation of AlSb Polycrystalline Thin Films by Co-Evaporation
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Abstract
AlSb polycrystalline thin films are prepared by vacuum co-evaporation and post-annealing.The structural,optical,and electrical properties of the films are studied.X-ray diffraction results show that the films annealed at 540℃ are polycrystalline AlSb with a single-phase fcc structure.Optical transmission measurements indicate an indirect optical band gap of 1.62eV.The activation energy of conductivity is 0.33eV,as derived from the relation of dark conductivity versus temperature.These results show that AlSb thin films could become important materials for novel solar cells.-
Keywords:
- AlSb,
- anneal,
- polycrystalline thin films
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References
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Proportional views