Chin. J. Semicond. > 2003, Volume 24 > Issue 11 > 1149-1153
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超薄栅氧化物pMOSFET器件在软击穿后的特性(英文)

张贺秋 , 许铭真 and 谭长华

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Key words: FN隧穿, MOSFET, 软击穿, 超薄

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(11): 1149-1153
      张贺秋, 许铭真, 谭长华. 超薄栅氧化物pMOSFET器件在软击穿后的特性(英文)[J]. 半导体学报(英文版), 2003, 24(11): 1149-1153.
      Citation:
      张贺秋, 许铭真, 谭长华. 超薄栅氧化物pMOSFET器件在软击穿后的特性(英文)[J]. 半导体学报(英文版), 2003, 24(11): 1149-1153.
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      • Received Date: 2015-08-20

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