Chin. J. Semicond. > 1990, Volume 11 > Issue 8 > 639-641
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电化学光伏法测定n-和p-GaAs少子扩散长度

王周成 , 彭瑞伍 , 彭承 and 孙恒慧

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(8): 639-641
      王周成, 彭瑞伍, 彭承, 孙恒慧. 电化学光伏法测定n-和p-GaAs少子扩散长度[J]. 半导体学报(英文版), 1990, 11(8): 639-641.
      Citation:
      王周成, 彭瑞伍, 彭承, 孙恒慧. 电化学光伏法测定n-和p-GaAs少子扩散长度[J]. 半导体学报(英文版), 1990, 11(8): 639-641.
      shu

      • Received Date: 2015-08-19

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