Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors

Wu Huizhen; Liang Jun; Lao Yanfeng; Yu Ping; Xu Tianning; Qiu Dongjiang

Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 218-222

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Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors

Wu Huizhen, Liang Jun, Lao Yanfeng, Yu Ping, Xu Tianning and Qiu Dongjiang

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Abstract: We propose to use Hexagonal phase Zn1-xMgxO as active channel layer and cubic phase Zn1-xMgxO as gate dielectric of transparent thin film transistors(TFTs).The consistent Zn1-xMgxO thin films are sequentially deposited on ITO substrates and monolithigraph and electrical contact are made.The TFTs have demonstrated an on/off ratio of 1E4 and a channel mobility on the order of 0.6cm2/(V·s).Leakage current is as low as 4.0E-8A at 2.5MV/cm electrical field.

Key words: cubic- and hexagonal- phase ZnMgO, thin film transistor electrical properties, 电学特性

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Wu Huizhen, Liang Jun, Lao Yanfeng, Yu Ping, Xu Tianning, Qiu Dongjiang. Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors[J]. Journal of Semiconductors, 2006, 27(S1): 218-222.

Wu H Z, Liang J, Lao Y F, Yu P, Xu T N, Qiu D J. Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors[J]. Chin. J. Semicond., 2006, 27(13): 218.

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Received: 20 August 2015 Revised: Online: Published: 01 December 2006

We propose to use Hexagonal phase Zn1-xMgxO as active channel layer and cubic phase Zn1-xMgxO as gate dielectric of transparent thin film transistors(TFTs).The consistent Zn1-xMgxO thin films are sequentially deposited on ITO substrates and monolithigraph and electrical contact are made.The TFTs have demonstrated an on/off ratio of 1E4 and a channel mobility on the order of 0.6cm2/(V·s).Leakage current is as low as 4.0E-8A at 2.5MV/cm electrical field.

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