Chin. J. Semicond. > 1986, Volume 7 > Issue 3 > 337-340

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1.3微米低阈值大功率基横模BH InGaAsP/InP激光器

王圩 , 张静媛 , 田慧良 and 汪孝杰

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(3): 337-340
      王圩, 张静媛, 田慧良, 汪孝杰. 1.3微米低阈值大功率基横模BH InGaAsP/InP激光器[J]. 半导体学报(英文版), 1986, 7(3): 337-340.
      Citation:
      王圩, 张静媛, 田慧良, 汪孝杰. 1.3微米低阈值大功率基横模BH InGaAsP/InP激光器[J]. 半导体学报(英文版), 1986, 7(3): 337-340.
      shu

      • Received Date: 2015-08-20

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