Chin. J. Semicond. > 1986, Volume 7 > Issue 3 > 337-340

CONTENTS

1.3微米低阈值大功率基横模BH InGaAsP/InP激光器

王圩 , 张静媛 , 田慧良 and 汪孝杰

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    Wang Dejun, Zhao Liang, Zhu Qiaozhi, Ma Jikai, Chen Suhua, Wang Haibo. A Transition Region Study of SiO2/4H-SiC Interface by ADXPS[J]. Journal of Semiconductors, 2008, 29(5): 944-949.
    Wang D J, Zhao L, Zhu Q Z, Ma J K, Chen S H, Wang H B. A Transition Region Study of SiO2/4H-SiC Interface by ADXPS[J]. J. Semicond., 2008, 29(5): 944.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2347 Times PDF downloads: 1041 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 March 1986

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1986  >  7(3): 337-340
      王圩, 张静媛, 田慧良, 汪孝杰. 1.3微米低阈值大功率基横模BH InGaAsP/InP激光器[J]. 半导体学报(英文版), 1986, 7(3): 337-340.
      Citation:
      王圩, 张静媛, 田慧良, 汪孝杰. 1.3微米低阈值大功率基横模BH InGaAsP/InP激光器[J]. 半导体学报(英文版), 1986, 7(3): 337-340.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return