Citation: |
Ning Jin, Liu Zhongli, Gao Jiantou. Electrical Characteristics of n-Type 4H-SiC MOS Capacitor[J]. Journal of Semiconductors, 2005, 26(S1): 140-142.
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Ning J, Liu Z L, Gao J T. Electrical Characteristics of n-Type 4H-SiC MOS Capacitor[J]. Chin. J. Semicond., 2005, 26(13): 140.
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Electrical Characteristics of n-Type 4H-SiC MOS Capacitor
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Abstract
Al gate MOS capacitor is fabricated using thermally oxidized 30nm SiO2 layer grown on n type 4H-SiC epitaxial layer by synthesizing H2 and O.2.The C-Vcharacteristics are measured and analysed.According to the results,the interface feature of SiO2-SiC and doping concentration of the n type 4H-SiC epitaxial layer are obtained.The interface has quite good quality and the interface state density is small.The doping concentration of uniform n type 4H-SiC epitaxial layer is 1.84e17cm-3.-
Keywords:
- 4H-SiC,
- MOS capacitor,
- C-V characteristics,
- thermally oxidized SiO2
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References
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Proportional views