Electrical Characteristics of n-Type 4H-SiC MOS Capacitor

Ning Jin; Liu Zhongli; Gao Jiantou

Chin. J. Semicond. > 2005, Volume 26 > Issue S1 > 140-142

CONTENTS

Electrical Characteristics of n-Type 4H-SiC MOS Capacitor

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Abstract: Al gate MOS capacitor is fabricated using thermally oxidized 30nm SiO2 layer grown on n type 4H-SiC epitaxial layer by synthesizing H2 and O.2.The C-Vcharacteristics are measured and analysed.According to the results,the interface feature of SiO2-SiC and doping concentration of the n type 4H-SiC epitaxial layer are obtained.The interface has quite good quality and the interface state density is small.The doping concentration of uniform n type 4H-SiC epitaxial layer is 1.84e17cm-3.

Key words: 4H-SiC, MOS capacitor, C-V characteristics, thermally oxidized SiO2

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10	Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD Li Zheyang, Dong Xun, Zhang Lan, Chen Gang, Bai Song, et al. Journal of Semiconductors, 2008, 29(7): 1347-1349.
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13	Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC Wang Chao, Zhang Yimen, Zhang Yuming, Wang Yuehu, Xu Daqing, et al. Journal of Semiconductors, 2008, 29(2): 240-243.
14	Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B+ Implantation Edge Termination Technology Chen Gang, Li Zheyang, Bai Song, Ren Chunjiang Chinese Journal of Semiconductors , 2007, 28(9): 1333-1336.
15	4H-SiC MESFET Device Process Chen Gang, Bai Song, Zhang Tao, Wang Hao, Li Zheyang, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 565-567.
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17	Temperature-Dependent 4H-SiC MOSFET Channel-Electron Mobility Model for Circuit Simulation Dai Zhenqing, Yang Ruixia, Yang Kewu Chinese Journal of Semiconductors , 2007, 28(8): 1252-1255.
18	C-V Characteristic Distortion in the Pinch-Off Mode of a Buried Channel MOS Structure in 4H-SiC Gao Jinxia, Zhang Yimen, Zhang Yuming Chinese Journal of Semiconductors , 2006, 27(7): 1259-1263.
19	Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs Gao Jinxia, Zhang Yimen, Zhang Yuming Chinese Journal of Semiconductors , 2006, 27(2): 283-289.
20	Anealing Effect on Cu/ Ni/4H-SiC Schottky Barrier Yang Weifeng, Yang Keqin, Chen Xiaping, Zhang Feng, Wang Liangjun, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 277-280.

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Received: 19 August 2015 Revised: Online: Published: 01 December 2005

Al gate MOS capacitor is fabricated using thermally oxidized 30nm SiO2 layer grown on n type 4H-SiC epitaxial layer by synthesizing H2 and O.2.The C-Vcharacteristics are measured and analysed.According to the results,the interface feature of SiO2-SiC and doping concentration of the n type 4H-SiC epitaxial layer are obtained.The interface has quite good quality and the interface state density is small.The doping concentration of uniform n type 4H-SiC epitaxial layer is 1.84e17cm-3.

Electrical Characteristics of n-Type 4H-SiC MOS Capacitor

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