Chin. J. Semicond. > 1995, Volume 16 > Issue 6 > 413-420
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MOCVD生长的Ⅱ－Ⅵ族化合物固溶体组分的热力学分析2．Hg_（1－x）Cd_xTe体系

陆大成，段树坤

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(6): 413-420
      陆大成，段树坤. MOCVD生长的Ⅱ－Ⅵ族化合物固溶体组分的热力学分析2．Hg_（1－x）Cd_xTe体系[J]. 半导体学报(英文版), 1995, 16(6): 413-420.
      Citation:
      陆大成，段树坤. MOCVD生长的Ⅱ－Ⅵ族化合物固溶体组分的热力学分析2．Hg_（1－x）Cd_xTe体系[J]. 半导体学报(英文版), 1995, 16(6): 413-420.
      shu

      • Received Date: 2015-08-19

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