Chin. J. Semicond. > 1994, Volume 15 > Issue 4 > 229-234
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利用CBE技术在Si衬底上生长GaAs薄膜

邢益荣

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    Received: 18 August 2015 Revised: Online: Published: 01 April 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(4): 229-234
      邢益荣. 利用CBE技术在Si衬底上生长GaAs薄膜[J]. 半导体学报(英文版), 1994, 15(4): 229-234.
      Citation:
      邢益荣. 利用CBE技术在Si衬底上生长GaAs薄膜[J]. 半导体学报(英文版), 1994, 15(4): 229-234.
      shu

      • Received Date: 2015-08-18

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