Chin. J. Semicond. > 1993, Volume 14 > Issue 4 > 217-223
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低能Si~+离子注入GaAs材料的沟道效应和射程分布

江炳尧 , 沈鸿烈 , 周祖尧 and 夏冠群

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(4): 217-223
      江炳尧, 沈鸿烈, 周祖尧, 夏冠群. 低能Si~+离子注入GaAs材料的沟道效应和射程分布[J]. 半导体学报(英文版), 1993, 14(4): 217-223.
      Citation:
      江炳尧, 沈鸿烈, 周祖尧, 夏冠群. 低能Si~+离子注入GaAs材料的沟道效应和射程分布[J]. 半导体学报(英文版), 1993, 14(4): 217-223.
      shu

      • Received Date: 2015-08-20

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