Chin. J. Semicond. > 1993, Volume 14 > Issue 4 > 217-223

CONTENTS

低能Si~+离子注入GaAs材料的沟道效应和射程分布

江炳尧 , 沈鸿烈 , 周祖尧 and 夏冠群

PDF

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2712 Times PDF downloads: 1360 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 April 1993

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      江炳尧, 沈鸿烈, 周祖尧, 夏冠群. 低能Si~+离子注入GaAs材料的沟道效应和射程分布[J]. 半导体学报(英文版), 1993, 14(4): 217-223.
      Citation:
      江炳尧, 沈鸿烈, 周祖尧, 夏冠群. 低能Si~+离子注入GaAs材料的沟道效应和射程分布[J]. 半导体学报(英文版), 1993, 14(4): 217-223.

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return