Chin. J. Semicond. > 1995, Volume 16 > Issue 8 > 594-597
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热壁外延制备的n－PbTe／p－Si异质结特性研究

杨玉琨，李文明，于磊，杨易，徐立兴，熊欣，王善力，黄和鸾

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(8): 594-597
      杨玉琨，李文明，于磊，杨易，徐立兴，熊欣，王善力，黄和鸾. 热壁外延制备的n－PbTe／p－Si异质结特性研究[J]. 半导体学报(英文版), 1995, 16(8): 594-597.
      Citation:
      杨玉琨，李文明，于磊，杨易，徐立兴，熊欣，王善力，黄和鸾. 热壁外延制备的n－PbTe／p－Si异质结特性研究[J]. 半导体学报(英文版), 1995, 16(8): 594-597.
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      • Received Date: 2015-08-19

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